Global Markets for Power Semiconductors, Materials and Technologies

Dublin, May 27, 2021 (GLOBE NEWSWIRE) – The “Power semiconductors: markets, materials, technologies” The Information Network report was added to ResearchAndMarkets.com from offer.

A power semiconductor device is used as a switch (control of switching on / off) or rectifier (converting alternating current to direct current) in power electronics, for example in household appliances with frequency conversion , EVs, EV chargers, welding inverters, industrial robots, etc. In 2019, power semiconductors accounted for a global market of US $ 41 billion, roughly 10% of the size of the global semiconductor market.

Power semiconductors can be divided into two parts:

(1) Discrete Power and (2) Power IC, with each party contributing approximately 50% of the power semiconductor market size in terms of revenue. When a power semiconductor device is in the form of an integrated circuit, it is called a Power IC, otherwise known as a power discrete.

Power semiconductors represent a US $ 41 billion market globally, and in this market we are positive on IGBTs and MOSFETs, given the market growth driven by (1) increasing requirements efficiency in multiple applications such as electric vehicles, industrial control and home appliances, and (2) growing demand from Chinese suppliers driven by a large domestic market and multiple Chinese brands of home appliances, automobiles and manufacturers are seeking to diversify their supply chains amid growing trade tensions.

Global leaders in IGBT typically cover a full range of applications ranging from consumer electronics, automotive and industrial controls to power generation, infrastructure and railways. Each of these sectors is analyzed in the report.

Global MOSFET leaders typically cover the full range of consumer electronics, automotive, computer, motor driver, power supply, telecom network, vehicle charging applications. electrical, LED lighting and medical. Each of these sectors is analyzed in the report.

The rapid growth of the power semiconductor market in recent years has been driven by the proliferation of computers and consumer electronics, such as desktops, laptops, netbooks, smartphones, flat panel displays. and portable media players that require sophisticated power management to improve energy efficiency. and extend battery life.

This report analyzes and forecasts global power semiconductor markets by type, geographic region and application. The market by substrate type also focuses on new materials and SiC and GaN fabrication.

Main topics covered:

Chapter 1 Introduction
1.1 Evolution of the IGBT chip structure
1.2 Effects of IGBT chip miniaturization
1.3 SiC trench type MOSFET and resistance reduction compared to DMOSFET
1.4 Planar and vertical MOSFET (trench)
1.5 Diagram of a FinFET
1.6 Schematic of a MOSFET and a Super Junction MOSFET
1.7 MOSFET SiC U

Chapter 2 Applications of Power Semiconductors
2.1 Solar energy forecast
2.2 IGBT full bridge topology
2.3 Functional diagram of the microcontroller inverter
2.4 Global Wind Turbine Shipments
2.5 Higher Wind Power Capacity by Country
2.6 Nomenclature for a typical inverter from 30 to 50 kW
2.7 A simple diagram of a HEV traction drive system.
2.8 A more complex scheme of PEEM in a plug-in hybrid electric vehicle (PHEV)
2.9 Driving and switching lose for the inverter
2.10 Unit price trends in power semiconductors
2.11 System and Component Costs for Wide Band Gap Semiconductors
2.12 vertical and lateral HEMT
2.13 GaN lateral and vertical HEMTs in electric vehicles
2.14 Market Factors for LED Biz and Applications
2.15 SSL vs. Classic technologies
2.16 Vs performance of LEDs. Traditional light sources
2.17 Comparison of energy production and use
2.18 Typical LED drive circuit
2.19 Integrating LEDs and LED Driver Using TSV
2.20 Single Power MOSFET Motor Controller
2.21 Basic principle of inverter operation
2.1 Solar energy forecast
2.2 IGBT full bridge topology
2.3 Functional diagram of the microcontroller inverter
2.4 Global Wind Turbine Shipments
2.5 Higher Wind Power Capacity by Country
2.6 Nomenclature for a typical inverter from 30 to 50 kW
2.7 A simple diagram of a HEV traction drive system.
2.8 A more complex scheme of PEEM in a plug-in hybrid electric vehicle (PHEV)
2.9 Driving and switching lose for the inverter
2.10 Unit price trends in power semiconductors
2.11 System and Component Costs for Wide Band Gap Semiconductors

Chapter 3 Market Analysis
3.1 Position of power semiconductors in the semiconductor market
3.2 Growth potential of power IGBTs and MOSFETs
3.3 IGBT market
3.3.1 Trends in IGBT technology
3.3.2 TAM IGBT
3.3.3 IGBT Market Growth by Applications
3.3.3.1 Automotive
3.3.3.2 Electricity production and network
3.3.3.3 Consumer electronics
3.3.3.4 Industrial controls
3.3.3.5 Railway / train
3.3.3.6 EV charging systems
3.3.4 IGBT Competitive Landscape
3.3.4.1 Global and Chinese market share
3.3.4.2 IGBT business model
3.3.4.3 Technology gap between China and global players
3.4 MOSFET TAM
3.4.1 MOSFET TAM methodology
3.4.2 MOSFET Market Growth by Applications
3.4.2.1 Automotive
3.4.2.2 EV charge
3.4.2.3 Industrial and medical
3.4.2.4 Consumer
3.4.2.5 Telecommunications network
3.4.3.6 Calculation
3.4.4 Competitive landscape of MOSFET
3.4.4.1 Global and Chinese Market Share
3.4.4.2 Gaps between technology and products of Chinese suppliers compared to global peers
3.5 Emerging end-application markets
3.5.1 Electric vehicles
3.5.2 5G infrastructure
3.4 Wideband Gap Power Semiconductor Market

Chapter 4 Next Generation Power Semiconductors
4.1 Expectations for Overcoming Silicon Limits
4.2 Expectations of SiC and GaN as new generation substrates
4.3 Advantages of wide bandgap semiconductors
4.4 SiC vs. GaN
4.4.1 Material properties
4.4.2 Material quality
4.4.3 SiC side devices:
4.4.4 Vertical SiC devices
4.4.5 GaN side devices
4.5 Manufacture of SiC devices
4.5.1 Global and epitaxial growth of SiC
4.5.1.1 Bulk growth
4.5.1.2 Epitaxial growth
4.5.1.3 Faults
4.5.2 Surface preparation
4.5.3 Engraving
4.5.4 Lithography
4.5.5 Ion implantation
4.5.6 Surface passivation
4.5.7 Metallization
4.6 Manufacture of GaN devices
4.6.1 GaN challenges
4.6.1.1 Costs
4.6.1.2 Reliability
4.6.1.3 Component packaging and thermal reliability
4.6.1.4 Control
4.6.1.5 Modeling the device
4.7 packaging